SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first main electrode terminal and second main electrode terminal disposed on the principal surface of a semiconductor substrate so as to be spaced from one another, an insulating film formed on the principal surface of the semiconductor substrate, and a thin film resistance layer. One end side of the thin film resistance layer is connected to the first main electrode terminal and the other end side of the thin film resistance layer is connected to the second main electrode terminal, the thin film resistance layer being spirally formed on the insulating film in such a way as to surround the first main electrode terminal. The thin film resistance layer extends while oscillating in a thickness direction of the semiconductor substrate.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a first main electrode terminal disposed on a principal surface of the semiconductor substrate; a second main electrode terminal provided away from the first main electrode terminal to be in a position on the principal surface to surround the first main electrode terminal; an insulating film formed on the principal surface to be between the first main electrode terminal and the second main electrode terminal; and a thin film resistance layer having
one end side connected to the first main electrode terminal, andanother end side connected to the second main electrode terminal, the thin film resistance layer being disposed on the insulating film to circle spirally so as to surround the first main electrode terminal while oscillating in a thickness direction of the semiconductor substrate.