SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

In one embodiment, a method of manufacturing a semiconductor device includes alternately forming plural first insulators and plural first films on a substrate, and etching the first insulators and the first films to form a contact region having first to N-th upper faces whose heights are mutually different where N is an integer of two or more. The method further includes forming a second insulator containing boron or hafnium on the first to N-th upper faces, forming a third insulator on the second insulator, and forming plural electrode layers between the plural first insulators. The method further includes etching the second and third insulators to form first to N-th contact holes respectively reaching the electrode layers under the first to N-th upper faces, and forming first to N-th contact plugs in the first to N-th contact holes respectively.

主权项

1. A method of manufacturing a semiconductor device, comprising:
alternately forming plural first insulators and plural first films on a substrate; etching the first insulators and the first films to form a contact region having first to N-th upper faces whose heights are mutually different where N is an integer of two or more; forming a second insulator containing boron or hafnium on the first to N-th upper faces; forming a third insulator on the second insulator; forming plural electrode layers between the plural first insulators; etching the second and third insulators to form first to N-th contact holes respectively reaching the electrode layers under the first to N-th upper faces; and forming first to N-th contact plugs in the first to N-th contact holes respectively.