| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device is provided with a first well region of a first conduction type having a first voltage (voltage VB) applied thereto, a second well region of a second conduction type formed in the surface layer section of the first well region and having a second voltage (voltage VS) different from the first voltage applied thereto, and a charge extracting region of the first conduction type formed in the surface layer section of the second well region and having the first voltage applied thereto. This inhibits the operation of a parasitic bipolar transistor. |
| 申请公布号 |
US2016056148(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514792027 |
申请日期 |
2015.07.06 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
KANNO Hiroshi;SUMIDA Hitoshi;YAMAJI Masaharu |
| 分类号 |
H01L27/02;H01L29/06;H01L29/10;H01L29/739 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first well region of a first conduction type configured to receive a first voltage; a second well region of a second conduction type formed in a surface layer section of the first well region and configured to receive a second voltage different from the first voltage; and a charge extracting region of the first conduction type formed in a surface layer section of the second well region and configured to receive the first voltage. |
| 地址 |
Kawasaki JP |
