SEMICONDUCTOR DEVICE

摘要

Performance of a semiconductor device is improved. The semiconductor device includes a substrate composed of silicon, a semiconductor layer composed of p-type nitride semiconductor provided on the substrate, and a transistor including a channel layer provided on the semiconductor layer. The semiconductor device further includes an n-type source region provided in the channel layer, and an n-type drain region provided in the channel layer separately from the source region in a plan view.;Each of the source region and the drain region is in contact with the semiconductor layer.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate composed of silicon; a first nitride semiconductor layer of a first conductivity type provided over the semiconductor substrate; a second nitride semiconductor layer provided over the first nitride semiconductor layer; a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being provided in the second nitride semiconductor layer; a second semiconductor region of the second conductivity type provided in the second nitride semiconductor layer separately from the first semiconductor region in a plan view; a first film part composed of one of insulator and nitride semiconductor, and provided over part of the second nitride semiconductor layer located between the first semiconductor region and the second semiconductor region; a gate electrode provided over the first film part; a source electrode electrically coupled to the first semiconductor region; and a drain electrode electrically coupled to the second semiconductor region, wherein each of the first semiconductor region and the second semiconductor region is in contact with the first nitride semiconductor layer.