Directly Sawing Wafers Covered with Liquid Molding Compound

摘要

A method includes forming a passivation layer over a metal pad, wherein the metal pad is further overlying a semiconductor substrate of a wafer. A Post-Passivation Interconnect (PPI) is formed to electrically couple to the metal pad, wherein a portion of the PPI is overlying the passivation layer. A metal bump is formed over and electrically coupled to the PPI. The method further includes applying a molding compound over the metal bump and the PPI, applying a release film over the molding compound, pressing the release film against the molding compound, and curing the molding compound when the release film is pressed against the molding compound. The release film is then removed from the molding compound. The wafer is sawed into dies using a blade, with the blade cutting through the molding compound.

主权项

1. A die comprising:
a substrate; a metal pad over the substrate; a passivation layer comprising a portion over the metal pad; a polymer layer over the passivation layer; a Post-Passivation Interconnect (PPI) comprising a first portion over the polymer layer, and a second portion extending into the polymer layer, wherein the PPI is electrically coupled to the metal pad; a metal bump over and electrically coupled to a portion of the PPI; and a molding compound over the PPI, wherein the molding compound surrounds, and is in physical contact with, a lower portion of the metal bump, wherein an upper portion of the metal bump protrudes out of the molding compound, and wherein edges of the molding compound extend to respective edges of the die.