| 发明名称 |
GREEN-LIGHT EMITTING DEVICE INCLUDING QUATERNARY QUANTUM WELL ON VICINAL C-PLANE |
| 摘要 |
Example embodiments relate to a green-light emitting device including a quaternary quantum well on a vicinal c-plane. The light-emitting device includes a substrate having a vicinal c-plane surface and a light-emitting layer on the vicinal c-plane surface of the substrate. The light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and quantum barrier layers of InzGa1-zN disposed on and under the quantum well layer respectively, and 0<x<1, 0<y<1, and 0<z<1. |
| 申请公布号 |
US2016056328(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514603103 |
申请日期 |
2015.01.22 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
CHO Yong-Hee;KIM Sungjin;SHIM Munbo;PAK Yukeun Eugene |
| 分类号 |
H01L33/06;H01L33/32;H01L33/16;H01L33/00 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting device comprising:
a substrate having a vicinal c-plane surface; a light-emitting layer on the vicinal c-plane surface of the substrate; and wherein the light-emitting layer includes a quantum well layer of AlxInyGa1-x-yN and at least one quantum barrier layers of InzGa1-zN disposed at either side of the quantum well layer, and wherein 0<x<1, 0<y<1, and 0<z<1. |
| 地址 |
Suwon-Si KR |
