| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
| 摘要 |
A semiconductor light emitting device includes: an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element. The electron blocking layer is formed of AlxGa1-xN, where 0<x≦1. A plurality of first regions blocking overflow of electrons from the active layer to the p-type semiconductor layer and a plurality of second regions formed of InN are alternately disposed within the electron blocking layer. |
| 申请公布号 |
US2016056325(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514676750 |
申请日期 |
2015.04.01 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
MAENG Jong Sun;KIM Jun Youn;CHOI Sung Min;YOO Kyung Ho |
| 分类号 |
H01L33/00;H01L33/32;H01L33/24;H01L33/06;H01L33/14 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light emitting device comprising:
an n-type semiconductor layer and a p-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer; and an electron blocking layer disposed between the active layer and the p-type semiconductor layer and doped with a p-type dopant element, wherein: the electron blocking layer includes a plurality of first regions formed of AlxGa1-xN, where 0<x≦1, and a plurality of second regions formed of InN, which are alternately disposed within the electron blocking layer. |
| 地址 |
Suwon-si KR |
