| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a fin-shaped silicon layer and a pillar-shaped silicon layer on the fin-shaped silicon layer, where a width of a bottom part of the pillar-shaped silicon layer is equal to a width of a top part of the fin-shaped silicon layer. A gate insulating film and a metal gate electrode are around the pillar-shaped silicon layer and a metal gate line extends in a direction perpendicular to the fin-shaped silicon layer and is connected to the metal gate electrode. A nitride film is on an entire top surface of the metal gate electrode and the metal gate line, except for the bottom of a contact. |
| 申请公布号 |
US2016056279(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514920448 |
申请日期 |
2015.10.22 |
| 申请人 |
Unisantis Electronics Singapore Pte. Ltd. |
发明人 |
MASUOKA Fujio;NAKAMURA Hiroki |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a fin-shaped silicon layer on a silicon substrate; a first insulating film around the fin-shaped silicon layer; a pillar-shaped silicon layer on the fin-shaped silicon layer, a width of the a bottom part of the pillar-shaped silicon layer being equal to a width of a top part of the fin-shaped silicon layer; a gate insulating film around the pillar-shaped silicon layer; a metal gate electrode around the gate insulating film; a metal gate line connected to the metal gate electrode; and a nitride film on an entire top surface of the metal gate electrode and the metal gate line except the bottom of a contact. |
| 地址 |
Singapore SG |
