MEMORY DEVICE HAVING CROSS POINT ARRAY STRUCTURE, MEMORY SYSTEM, AND METHOD OF OPERATING MEMORY DEVICE

摘要

In a method of operating a memory device having a cross point array structure, the memory device includes multiple tiles, and each of the tiles includes memory cells of multiple layers. The method includes accessing, in a first tile, multiple memory cells of a first layer disposed in a region where at least one first line and at least one second line cross each other, accessing, in the first tile, multiple memory cells of a second layer disposed in a region where at least one first line and at least one second line cross each other, and accessing, after the memory cells of the multiple layers of the first tile are accessed, multiple memory cells included in a second tile. Related memory devices and memory systems are also discussed.

主权项

1. A method of operating a memory device having a cross point array structure, wherein the memory device includes multiple tiles, and each of the tiles includes memory cells of multiple layers of the memory device, the method comprising:
accessing, in a first one of the tiles, ones of the memory cells of a first layer disposed where one or more first lines and one or more second lines cross each other; accessing, in the first one of the tiles, ones of the memory cells of a second layer disposed where one or more first lines and one or more second lines cross each other; and accessing, after the memory cells of the multiple layers of the first one of the tiles are accessed, the memory cells included in a second one of the tiles.