Semiconductor Wafer Composed Of Monocrystalline Silicon And Method For Producing It

摘要

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

主权项

1. A monocrystalline silicon semiconductor wafer having a nitrogen concentration of not more than 1×1012 atoms/cm3, and when subjected to defect delineation/optical microscopy comprises:
a denuded zone (“DZ”) which extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer and which is free of BMD defects and has an averaged thickness of not less than 5 μm, and a region which adjoins the DZ and extends further into the bulk of the semiconductor wafer, the region having BMD defects having a size of not less than 50 nm, wherein a depth profile of the BMD defects in the region has a local maximum which is at a distance of not less than 20 μm and not more than 200 μm from the front side of the semiconductor wafer, and wherein the density of the BMD defects at the local maximum is not less than 2×1010/cm3.