Tool having CVD coating

摘要

A tool having a base body of carbide, cermet, ceramic, steel or high speed steel and a single-layer or multi-layer wear-protection coating applied thereto in a CVD process, wherein the wear-protection coating has at least one Ti1-xAlxCyNz layer having stoichiometry coefficients 0.70≦x<1.0≦y<0.25 and 0.75≦z<1.15 wherein the Ti1-xAlxCyNz layer is of a thickness of 1 μm to 25 μm and has a crystallographic preferential orientation, which is characterised by a ratio of the intensities of the X-ray diffraction peaks of the crystallographic {111} plane and the {200} plane, wherein I{111}/I{200}>1+h (In h)2, wherein h is the thickness of the Ti1-xAlxCyNz layer in micrometer.

主权项

1. A process for the production of a tool having a base body of carbide, cermet, ceramic, steel or high speed steel and a single-layer or multi-layer wear-protection coating applied thereto in a CVD process, wherein the wear-protection coating has at least one Ti1-xAlxCyNz layer having stoichiometry coefficients 0.70≦x<1.0≦y<0.25 and 0.75≦z<1.15 and of a thickness in the range of 1 μm to 25 μm, wherein for production of the Ti1-xAlxCyNz layer
a) the bodies to be coated are placed in a substantially cylindrical CVD reactor designed for an afflux flow on the bodies to be coated with the process gases in a direction substantially radially relative to the longitudinal axis of the reactor, b) two precursor gas mixtures (VG1) and (VG1) are provided, wherein the first precursor gas mixture (VG1) contains
0.005% to 0.2 vol-% TiCl4,0.025% to 0.5 vol-% AlCl3 andas a carrier gas hydrogen (H2) or a mixture of hydrogen and nitrogen (H2/N2), and
wherein the second precursor gas mixture (VG2) contains
0.1 to 3.0 vol-% of at least one N-donor selected from ammonia (NH3) and hydrazine (N2H4), andas a carrier gas hydrogen (H2) or a mixture of hydrogen and nitrogen (H2/N2), and wherein the first precursor gas mixture (VG1) and/or the second precursor gas mixture (VG2) optionally contains a C-donor selected from acetonitrile (CH3CN), ethane (C6H6), ethene (C2H4) and ethyne (C2H2) and mixtures thereof, wherein the total vol-% proportion of N-donor and C-donor in the precursor gas mixtures (VG1, VG2) is in the range of 0.1 to 3.0 vol-%, c) the two precursor gas mixtures (VG1, VG2) are kept separate before passing into the reaction zone and are introduced substantially radially relative to the longitudinal axis of the reactor at a process temperature in the CVD reactor in the range of 600° C. to 850° C. and a process pressure in the CVD reactor in the range of 0.2 to 18 kPa, wherein the ratio of the volume gas flows ({dot over (V)}) of the precursor gas mixtures (VG1, VG2) (VG1)/{dot over (V)}(VG2) is less than 1.5.