COMPOSITION FOR FINER RESIST PATTERN, AND FINE PATTERN-FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a composition for finer resist patterns that can make a resist pattern finer precisely and effectively.SOLUTION: A composition for finer resist patterns includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total content of these ions is no less than 50% by mass with respect to a sum of components other than the solvent.SELECTED DRAWING: Figure 2