发明名称 Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Diode-Mode Turn-On
摘要 Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
申请公布号 US2016056815(A1) 申请公布日期 2016.02.25
申请号 US201514934053 申请日期 2015.11.05
申请人 Ideal Power Inc. 发明人 Alexander William C.;Blanchard Richard A.
分类号 H03K17/66;H01L29/732;H01L29/417;H01L29/423;H01L29/08;H01L29/10 主分类号 H03K17/66
代理机构 代理人
主权项
地址 Austin TX US