发明名称 |
Bidirectional Two-Base Bipolar Junction Transistor Operation, Circuits, and Systems with Diode-Mode Turn-On |
摘要 |
Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low. |
申请公布号 |
US2016056815(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201514934053 |
申请日期 |
2015.11.05 |
申请人 |
Ideal Power Inc. |
发明人 |
Alexander William C.;Blanchard Richard A. |
分类号 |
H03K17/66;H01L29/732;H01L29/417;H01L29/423;H01L29/08;H01L29/10 |
主分类号 |
H03K17/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Austin TX US |