发明名称 |
POWER TRANSISTOR WITH DISTRIBUTED GATE |
摘要 |
An electronic circuit is disclosed. The electronic circuit includes a distributed power switch. In some embodiments, the electronic circuit also includes one or more of a distributed gate driver, a distributed gate pulldown device, a distributed diode, and a low resistance gate and/or source connection structure. An electronic component comprising the circuit, and methods of manufacturing the circuit are also disclosed. |
申请公布号 |
US2016056721(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201514831742 |
申请日期 |
2015.08.20 |
申请人 |
NAVITAS SEMICONDUCTOR INC. |
发明人 |
Kinzer Daniel M. |
分类号 |
H02M3/158 |
主分类号 |
H02M3/158 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic circuit, comprising:
a substrate comprising GaN; a distributed power switch formed on the substrate, wherein the distributed power switch comprises a plurality of sub-transistors, and wherein each sub-transistor comprises a gate, a source, and a drain; and a distributed drive circuit formed on the substrate, wherein the distributed drive circuit comprises a distributed output stage formed by a plurality of sub-drivers, wherein each sub-driver comprises an input and an output, and wherein the output of each sub-driver is connected to a gate of one or more corresponding sub-transistors of the sub-transistors of the distributed power switch. |
地址 |
El Segundo CA US |