发明名称 POWER TRANSISTOR WITH DISTRIBUTED GATE
摘要 An electronic circuit is disclosed. The electronic circuit includes a distributed power switch. In some embodiments, the electronic circuit also includes one or more of a distributed gate driver, a distributed gate pulldown device, a distributed diode, and a low resistance gate and/or source connection structure. An electronic component comprising the circuit, and methods of manufacturing the circuit are also disclosed.
申请公布号 US2016056721(A1) 申请公布日期 2016.02.25
申请号 US201514831742 申请日期 2015.08.20
申请人 NAVITAS SEMICONDUCTOR INC. 发明人 Kinzer Daniel M.
分类号 H02M3/158 主分类号 H02M3/158
代理机构 代理人
主权项 1. An electronic circuit, comprising: a substrate comprising GaN; a distributed power switch formed on the substrate, wherein the distributed power switch comprises a plurality of sub-transistors, and wherein each sub-transistor comprises a gate, a source, and a drain; and a distributed drive circuit formed on the substrate, wherein the distributed drive circuit comprises a distributed output stage formed by a plurality of sub-drivers, wherein each sub-driver comprises an input and an output, and wherein the output of each sub-driver is connected to a gate of one or more corresponding sub-transistors of the sub-transistors of the distributed power switch.
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