Tuning Tensile Strain on FinFET

摘要

A fin field effect transistor (FinFET) having a tunable tensile strain and an embodiment method of tuning tensile strain in an integrated circuit are provided. The method includes forming a source/drain region on opposing sides of a gate region in a fin, forming spacers over the fin, the spacers adjacent to the source/drain regions, depositing a dielectric between the spacers; and performing an annealing process to contract the dielectric, the dielectric contraction deforming the spacers, the spacer deformation enlarging the gate region in the fin.

主权项

1. A semiconductor device comprising:
a first device comprising:
a first fin;first source/drain regions in the first fin on opposing sides of a first channel region;a first gate electrode overlying the first channel region; anda first dielectric layer on opposing sides of the first gate electrode, the first gate electrode having substantially linear sidewalls; and a second device comprising:
a second fin;second source/drain regions in the second fin on opposing sides of a second channel region;a second gate electrode overlying the second channel region; anda second dielectric layer on opposing sides of the second gate electrode, the second gate electrode having convex sidewalls projecting toward the second dielectric layer.