发明名称 |
Operational Amplifier Methods for Charging of Sense Amplifier Internal Nodes |
摘要 |
Rather than supply an internal node of a non-volatile memory's sense amplifier from a supply level through a transistor by applying a voltage to the transistor's gate to clamp the node, the internal node is supplied by an op-amp through a pass gate. The op-amp receives feedback from above the pass gate. This allows a desired voltage level to be more quickly and accurately established on the node. Using a two-step reference level for the op-amp can further increases speed and accuracy. Biasing the op-amp with the external power supply can offer additional advantages. |
申请公布号 |
US2016055916(A1) |
申请公布日期 |
2016.02.25 |
申请号 |
US201414467770 |
申请日期 |
2014.08.25 |
申请人 |
SanDisk Technologies Inc. |
发明人 |
Louie Kenneth;Nguyen Khanh;Nguyen Hao |
分类号 |
G11C16/26;G11C16/24;G11C16/34 |
主分类号 |
G11C16/26 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Plano TX US |