| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity. |
| 申请公布号 |
US2016056067(A1) |
申请公布日期 |
2016.02.25 |
| 申请号 |
US201514607521 |
申请日期 |
2015.01.28 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
ENDO Masato;Masuda Kazunori;Nishida Yukio;Kami Naoya;Tatsumi Yuuichi;Kondo Naoyuki |
| 分类号 |
H01L21/768;H01L23/522;H01L23/528 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a plurality of wires arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity; a first dielectric film having a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity; and a second dielectric film formed above the first dielectric film so as to cover the second cavity. |
| 地址 |
Minato-ku JP |
