发明名称 ANOMALY DETECTION SYSTEM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 According to one embodiment, there is provided an anomaly detection system for a second unit incidental to a first unit that processes a substrate. The anomaly detection system includes a collecting unit, a first calculating unit, a second calculating unit, and a determining unit. The collecting unit is configured to collect a plurality of types of parameters related to a state of the second unit. The first calculating unit is configured to calculate a divergence of a coordinate point from a reference space in a virtual coordinate space of a plurality of types of parameters, the coordinate point being indicated by the plurality of types of collected parameters. The second calculating unit is configured to accumulate the calculated divergence and calculate a cumulative divergence. The determining unit is configured to compare the calculated cumulative divergence with a threshold value and determine an anomaly in the second unit.
申请公布号 US2016056064(A1) 申请公布日期 2016.02.25
申请号 US201514645978 申请日期 2015.03.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MIKI TSUTOMU
分类号 H01L21/67;H01L21/66 主分类号 H01L21/67
代理机构 代理人
主权项 1. An anomaly detection system for a second unit incidental to a first unit that processes a substrate, comprising: a collecting unit configured to collect a plurality of types of parameters related to a state of the second unit; a first calculating unit configured to calculate a divergence of a coordinate point from a reference space in a virtual coordinate space of a plurality of types of parameters, the coordinate point being indicated by the plurality of types of collected parameters; a second calculating unit configured to accumulate the calculated divergence and calculate a cumulative divergence; and a determining unit configured to compare the calculated cumulative divergence with a threshold value and determine an anomaly in the second unit.
地址 Tokyo JP