| 摘要 |
PURPOSE:To carry out dissociation and etching by microwave plasma with high efficiency, by providing an auxiliary microwave generator to the title plasma producing device when a microwave is sent to the plasma producing device to dissociate the processing gas and etching is carried out. CONSTITUTION:The microwave at 2.45GHz is oscillated from the microwave generator 1 of a magnetron, etc., microwave electric power is supplied to a plasma producing chamber 6 through a circulator 2, a microwave detector 4, and a tuner 4, a processing gas is introduced from an inlet 7 to produce plasma, and the dissociated substance of the processing gas is deposited on the surface of a sample 9 to be treated or the surface is etched. In this case, the microwave power supplied at the initial stage of operation is mostly reflected for lack of plasma, circulated to a circulator 21 at a circulator 2, sent to a plasma producing device 12, and introduced into a nonreflective load 31 from the device 12. The power is then supplied to the auxiliary plasma device 12 through a microwave detector 41, a tuner and attenuator 51, and the production of plasma is facilitated. |
