METHOD OF FORMING A THIN FILM OF A SEMICONDUCTOR DEVICE

摘要

Disclosed is a method for forming a thin film of a semiconductor device, comprising the following steps: forming a precursor layer on the surface of a substrate by supplying a precursor gas into a chamber; discharging the precursor gas remaining in the chamber to the outside of the chamber by supplying a purge gas into the chamber; supplying a reaction gas into the chamber; generating plasma from the reaction gas; forming a thin film by chemical reaction of the plasma and the precursor layer by radiating extreme ultraviolet (EUV) into the chamber; and discharging the reaction gas and the plasma remaining in the chamber to the outside of the chamber by supplying the purge gas into the chamber.