| 摘要 |
970,428. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Jan. 31, 1962 [Feb. 3, 1961], No. 3663/62. Heading H1K. An ohmic contact is made to an electrode on a semi-conductor device by placing a current supply conductor 5 which is coated with a material of relatively low melting point, in contact with the electrode 4 by means of a jig 6 and passing a current through the conductor so that it is welded to the electrode, after which, jig 6 is removed and the part of the conductor adjacent the electrode is heated so that the coating material melts to form a soldered joint. The electrodes of the diode or as shown the transistor are made of lead, bismuth or tin together with suitable doping elements and the conductor is a copper-clad nickel wire of diameter 80 Á which is coated with a 10 Á thick layer of a eutectic tin-lead alloy. The coating is melted by directing thereat a stream of hydrogen at a temperature of 275‹ C. |
