| 摘要 |
A storage control device includes a first rewriting section, a second rewriting section, and a first retry control section. The first rewriting section performs first rewrite to rewrite other of two binary values into a memory cell in which one of the two binary values is written. The second rewriting section performs second rewrite to rewrite the one of the two binary values into the memory cell in which the other of the two binary values is written. The first retry control section causes the memory cell that has undergone the first rewrite to be subjected to the second rewrite followed by the first rewrite again if an error occurs during the first rewrite. |
