发明名称 APPARATUS AND METHODS FOR MINIMIZING ARCING IN A PLASMA PROCESSING CHAMBER
摘要 A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.
申请公布号 EP1509942(B1) 申请公布日期 2016.02.24
申请号 EP20030726570 申请日期 2003.05.01
申请人 LAM RESEARCH CORPORATION 发明人 HOWALD, ARTHUR, M.;KUTHI, ANDRAS;BAILEY, ANDREW, D., III;BERNEY, BUTCH
分类号 H01J37/32;H05H1/46;C23C16/00;C23C16/50;H01L21/205;H01L21/306;H01L21/3065;H05H1/00 主分类号 H01J37/32
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