| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that can improve operation characteristics.SOLUTION: A nonvolatile semiconductor memory device of an embodiment includes: a memory cell array that has a plurality of column blocks each of which includes a plurality of column units and one redundancy unit that is allocated to columns; a column control circuit that sequentially selects the column blocks and, if defective address information on the column units matches an address signal, selects the redundancy unit by using a second pointer so as to replace data of one of the column units that is registered in the defective address information on the basis of data of the redundancy unit corresponding to the defective address information; and a selection circuit that selects and outputs either one of the data of the column unit and the data of the redundancy unit on the basis of a result of comparison between the address signal and the defective address information. |
