| 摘要 |
Provided are a photo-electric power generating element having a sufficient fill factor, and enabling a manufacturing cost to be reduced, and a manufacturing method therefor. A photo-electric power generating element 10 including: an n-type crystal semiconductor substrate 11; a p-type amorphous silicon thin film 13 overlaid on one face side of the n-type crystal semiconductor substrate 11; and an n-type amorphous silicon thin film 15 overlaid on another face side of the n-type crystal semiconductor substrate 11, in which the photo-electric power generating element 10 further includes an intrinsic amorphous silicon thin film 12 interposed between the n-type crystal semiconductor substrate 11 and the p-type amorphous silicon thin film 13, the n-type crystal semiconductor substrate 11 and the n-type amorphous silicon thin film 15 are directly bonded, and a side on which the n-type amorphous silicon thin film 15 is provided is used as a plane of light incidence. |
