| 摘要 |
A light-emitting device and a method of manufacturing the same are provided. The light-emitting device (100) includes a compound semiconductor structure (120) having a first N-type compound semiconductor layer (123), an active layer (122), and a P-type compound semiconductor layer (121), a P-type electrode layer (150) that is disposed on the P-type compound semiconductor layer and electrically connects with the P-type compound semiconductor layer, at least one insulation wall (131,132) disposed on the compound semiconductor structure and the P-type electrode layer, at least one N-type electrode layer (141,142) penetrating the at least one insulation wall, and a conductive substrate (170) in which at least one N-type electrode connecting layer (171,172) corresponding to the N-type electrode layer is separated from a P-type electrode connecting layer (173) corresponding to the P-type electrode layer. |
