Hybrid TSV and method for forming the same

摘要

A semiconductor chip includes a substrate and a semiconductor layer positioned above the substrate. A hybrid through-silicon via (“TSV”) extends continuously through at least the semiconductor layer and the substrate and includes a first TSV portion and a second TSV portion. A lower portion of the first TSV portion is positioned in the substrate and has a lower surface adjacent to a back side of the substrate and an upper surface below the semiconductor layer. Upper sidewall portions of the first TSV portion extend from the upper surface through at least the semiconductor layer. A depth of the lower portion is greater than a thickness of the upper sidewall portions. The second TSV portion is conductively coupled to the first TSV portion, is laterally surrounded by the upper sidewall portions, and extends continuously from the upper surface through at least the semiconductor layer.

主权项

1. A semiconductor chip, comprising:
a substrate; a semiconductor layer positioned above said substrate; and a hybrid through-silicon via (“TSV”) extending continuously through at least said semiconductor layer and said substrate, said hybrid TSV comprising:
a first TSV portion comprising a first conductive contact material, wherein said first TSV portion comprises a lower portion that is positioned in said substrate and has a lower surface that is positioned adjacent to a back side of said substrate and an upper surface that is positioned below said semiconductor layer, said first TSV portion further comprising upper sidewall portions that extend from said upper surface of said lower portion through at least said semiconductor layer, wherein a depth of said lower portion between said upper and lower surfaces is greater than a thickness of said upper sidewall portions; anda second TSV portion comprising a second conductive contact material, wherein said second TSV portion is conductively coupled to said first TSV portion, is laterally surrounded by said upper sidewall portions, and extends continuously from said upper surface of said lower portion through at least said semiconductor layer.