Bonded semiconductor structure with SiGeC/SiGeBC layer as etch stop

摘要

A semiconductor structure is formed with a first wafer (e.g. a handle wafer) and a second wafer (e.g. a bulk silicon wafer) bonded together. The second wafer includes an active layer, which in some embodiments is formed before the two wafers are bonded together. A substrate is removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC or SiGeBC layer as an etch stop. In some embodiments, the SiGeC or SiGeBC layer is formed by epitaxial growth, ion implantation or a combination of epitaxial growth and ion implantation.

主权项

1. A method comprising:
forming a first wafer having a first bonding material; forming a second wafer having a substrate, a SiGeBC layer, an active layer and a second bonding material, the active layer being between the SiGeBC layer and the second bonding material; bonding the second wafer to the first wafer at the first and second bonding materials; and removing the substrate using the SiGeBC layer as an etch stop.