Memory devices and related methods

摘要

A resistive memory device. Implementations may include an array of memory cells including resistive memory elements which are coupled to isolation transistors and which may include a magnetic tunnel junction. A decoder decodes input address information to select a row of the array. A binarizer coupled to the memory array assigns binary weights to outputs of the memory array output through bit lines coupled to the memory cells. A summer sums the binary weighted outputs, and a quantizer generates an output digital code corresponding to data stored in a plurality of memory cells during a prior program cycle. The outputs of the memory array may be currents or voltages. In implementations multiple arrays of memory cells may be utilized and their respective outputs combined to form higher bit outputs, such as eight bit, twelve bit, sixteen bit, and so forth.

主权项

1. A memory device, comprising:
an array of memory cells, each memory cell comprising a memory element programmable between a first memory state and a second memory state; a decoder electrically coupled to one or more word lines comprised in the array of memory cells, the decoder configured to decode an address input to select a word line of the one or more word lines comprised in the array of memory cells; a binarizer electrically coupled to the array of memory cells and configured to receive a plurality of memory cell outputs from the array of memory cells and generate a plurality of binary weighted memory cell outputs in response to the decoder selecting a word line of the one or more word lines of the array of memory cells, wherein each binary weighted memory cell output corresponds with one memory cell; a summer electrically coupled to the binarizer and configured to sum the binary weighted memory cell outputs into an analog signal; and a quantizer electrically coupled to the summer and configured to convert the analog signal into a digital output.