Semiconductor memory device for controlling an internal supply voltage based on a clock frequency of an external clock signal and a look-up table

摘要

A control circuit, a memory device and a voltage control method thereof are provided. The memory device includes a memory cell, a voltage regulator circuit and the control circuit. The control circuit receives a clock signal, and determines a clock frequency of the clock signal so as to generate a control signal. An operation voltage is converted into an internal supply voltage for supplying the control circuit by the voltage regulator circuit according to the control signal.

主权项

1. A memory device, comprising:
a memory cell; a voltage regulator circuit, coupled to the memory cell; and a control circuit, coupled to the memory cell and the voltage regulator circuit, receiving a clock signal and determining a clock frequency of the clock signal to generate a control signal, wherein the voltage regulator circuit converts an operation voltage into an internal supply voltage for supplying the control circuit based on the control signal, and wherein the internal supply voltage corresponding to the clock frequency is obtained by referring to a look-up table having a set of feature values corresponding to the internal supply voltage.