Method for making light emitting diode

摘要

The disclosure relates to a method of making light emitting diode. The method includes following steps: providing a free-standing carbon nanotube film, wherein the carbon nanotube film includes a number of carbon nanotubes aligned and connected with each other via van der Waals force; suspending the carbon nanotube film and inducing defects on the surface of the carbon nanotubes; growing a nano-material layer on the surface of the carbon nanotubes via atomic layer deposition; removing the carbon nanotube film by annealing to form a number of nanotubes; wherein the number of nanotubes are successively aligned and connected with each other to form a free-standing nanotube film; setting the nanotube film on a substrate; growing a first semiconductor layer, an active layer and a second semiconductor layer on the substrate; and applying a first electrode on the second semiconductor layer and a second electrode on the first semiconductor layer.

主权项

1. A method for making a light emitting diode, the method comprising:
providing a free standing carbon nanotube film, wherein the carbon nanotube film comprises a plurality of carbon nanotubes orderly arranged and combined with each other via van der Waals force to form a plurality of apertures; inducing defects on surfaces of the plurality of carbon nanotubes to form a treated carbon nanotube film; growing a nano-material layer on the surfaces of the plurality of carbon nanotubes by atomic layer deposition to form a nanotube film preform; obtaining a free-standing nanotube film by removing the carbon nanotube film by annealing the nanotube film preform, wherein nanotube film comprises a plurality of nanotubes orderly arranged and combined with each other; placing the nanotube film on an epitaxial growth surface of a substrate; epitaxially growing a first semiconductor layer, an active layer and a second semiconductor layer on the epitaxial growth surface of the substrate; exposing a part of the first semiconductor layer; and applying a first electrode on the second semiconductor layer and a second electrode on the first semiconductor layer.