| 发明名称 | Phototransistor capable of detecting photon flux below photon shot noise | ||
| 摘要 | Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/√{square root over (β)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/β, wherein f is an electrical bandwidth of the PT and β is a current amplification gain of the PT. | ||
| 申请公布号 | US9269846(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414181879 | 申请日期 | 2014.02.17 |
| 申请人 | WAVEFRONT HOLDINGS, LLC | 发明人 | Yao Jie |
| 分类号 | G01J1/42;H01L31/11;G01S17/08;H01L27/146 | 主分类号 | G01J1/42 |
| 代理机构 | Pillsbury Winthrop Shaw Pittman LLP | 代理人 | Pillsbury Winthrop Shaw Pittman LLP |
| 主权项 | 1. A phototransistor (PT) comprising an emitter, a collector and a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within an electrical bandwidth of the PT. | ||
| 地址 | Basking Ridge NJ US | ||