发明名称 CIS-based thin film solar cell
摘要 A CIS-based thin film solar cell has a backside electrode layer that is divided by a pattern (P1), and a CIS-based light absorption layer, and a transparent conductive film are sequentially formed on a substrate. The backside electrode layer comprises an intermediate layer on the surface that is in contact with the CIS-based light absorption layer, the intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer; the intermediate layer comprises a first intermediate layer portion which is formed on the upper surface and a second intermediate layer portion which is formed on the lateral surface that and faces the pattern (P1); and the film thickness of the second intermediate layer portion is larger than the film thickness of the first intermediate layer portion.
申请公布号 US9269841(B2) 申请公布日期 2016.02.23
申请号 US201113702458 申请日期 2011.06.16
申请人 SOLAR FRONTIER K.K. 发明人 Morimoto Takuya;Sugimoto Hiroki;Hakuma Hideki
分类号 H01L31/0224;H01L31/0749;H01L31/046;H01L31/0463;H01L31/032 主分类号 H01L31/0224
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A CIS-based thin film solar cell fabricated by sequentially depositing a backside electrode layer divided by a dividing groove, a CIS-based light absorption layer and a transparent conductive film on a substrate, wherein said backside electrode layer comprises an intermediate layer on a surface that is in contact with the CIS-based light absorption layer, said intermediate layer being composed of a compound of a metal that constitutes the backside electrode layer and a group VI element that constitutes the CIS-based light absorption layer, wherein the surface comprises an upper surface and a lateral surface, wherein said intermediate layer comprises a first intermediate layer portion formed on the upper surface that is parallel to the substrate and a second intermediate layer portion formed on the lateral surface that is vertical to the substrate and opposed to the dividing groove, and wherein a film thickness of the second intermediate layer portion along a direction horizontal to the substrate is larger than that of the first intermediate layer portion along a direction vertical to the substrate.
地址 Tokyo JP