Pattern generating method, pattern forming method, and pattern generating program

摘要

One embodiment includes: a step of evaluating an amount of flare occurring through a mask at EUV exposure; a step of providing a dummy mask pattern on the mask based on the evaluated result of the amount of flare; and a step of executing a flare correction and an optical proximity correction on a layout pattern. The layout pattern is provided by the EUV exposure through the mask with the dummy mask pattern.

主权项

1. A pattern generating method comprising:
evaluating an amount of flare occurring through a mask at EUV exposure, the mask having a main mask pattern; providing a dummy mask pattern on the mask based on the evaluated result of the amount of flare; executing a flare correction and an optical proximity correction on a layout pattern formed by the EUV exposure through the mask with the dummy mask pattern; and executing a bias process on the main mask pattern of the mask to thicken a line width of the main mask pattern by an amount of line width that is to be removed by a slimming process that removes a dummy layout pattern on a wafer formed corresponding to the dummy mask pattern.