Method and apparatus for forming copper(Cu) or antimony(Sb) doped zinc telluride and cadmium zinc telluride layers in a photovoltaic device

摘要

A method and apparatus for an amount of Cu or Sb dopant incorporated into a zinc-based layer as the layer is being formed. The layer is formed over a coated substrate using an electrochemical deposition (ECD) process. In the ECD process, the bias voltage and plating solution composition may be systematically changed during the electrochemical deposition process to change the amount of Cu or Sb dopant incorporated into the plated layer.

主权项

1. A method of manufacturing a photovoltaic device, the method comprising:
forming a first plating solution comprising a dopant, a complexing agent and a zinc-based semiconductor solute, wherein the complexing agent is at least one of citrate, phenathroline, thiocyanate, halides, pyridines or their derivatives; contacting at least one surface of a partially completed photovoltaic device with the first plating solution; electrically connecting the partially completed photovoltaic device to a power source; and forming at least a first portion of a doped zinc-based semiconductor layer on the partially completed photovoltaic device from the first plating solution using electrochemical deposition by generating a bias voltage across the partially completed photovoltaic device and the first plating solution for a predetermined period of time.