发明名称 Photovoltaic device including a back contact and method of manufacturing
摘要 A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer.
申请公布号 US9269849(B2) 申请公布日期 2016.02.23
申请号 US201414221245 申请日期 2014.03.20
申请人 First Solar, Inc. 发明人 Yu San;Palaniappagounder Veluchamy;Addepalli Pratima;Khan Imran
分类号 H01L31/02;H01L31/18;H01L31/0224;H01L31/0336;H01L31/073 主分类号 H01L31/02
代理机构 MacMillan, Sobanski & Todd, LLC 代理人 MacMillan, Sobanski & Todd, LLC
主权项 1. A photovoltaic device comprising: a substrate structure including a base layer, a transparent conductive oxide layer, at least one semiconductor layer; and an electron reflector layer disposed over the substrate structure, wherein the electron reflector layer comprises zinc telluride doped with copper telluride.
地址 Tempe AZ US