发明名称 |
Photovoltaic device including a back contact and method of manufacturing |
摘要 |
A photovoltaic device includes a substrate, a transparent conductive oxide, an n-type window layer, a p-type absorber layer and an electron reflector layer. The electron reflector layer may include zinc telluride doped with copper telluride, zinc telluride alloyed with copper telluride, or a bilayer of multiple layers containing zinc, copper, cadmium and tellurium in various compositions. A process for manufacturing a photovoltaic device includes forming a layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming an electron reflector layer over a p-type absorber layer. |
申请公布号 |
US9269849(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201414221245 |
申请日期 |
2014.03.20 |
申请人 |
First Solar, Inc. |
发明人 |
Yu San;Palaniappagounder Veluchamy;Addepalli Pratima;Khan Imran |
分类号 |
H01L31/02;H01L31/18;H01L31/0224;H01L31/0336;H01L31/073 |
主分类号 |
H01L31/02 |
代理机构 |
MacMillan, Sobanski & Todd, LLC |
代理人 |
MacMillan, Sobanski & Todd, LLC |
主权项 |
1. A photovoltaic device comprising:
a substrate structure including a base layer, a transparent conductive oxide layer, at least one semiconductor layer; and an electron reflector layer disposed over the substrate structure, wherein the electron reflector layer comprises zinc telluride doped with copper telluride. |
地址 |
Tempe AZ US |