Source/drain structures and methods of forming same

摘要

The present disclosure provides a semiconductor device including a gate stack disposed over a substrate, a source/drain (S/D) feature at least partially embedded within the substrate adjacent the gate stack. The S/D feature includes a first semiconductor material layer, a second semiconductor material layer disposed over the first semiconductor material layer. The second semiconductor material layer is different to the first semiconductor material layer. The S/D also includes a third semiconductor material layer disposed over the second semiconductor material layer, which includes a tin (Sn) material.

主权项

1. A device comprising:
a gate stack disposed over a substrate; a source/drain (S/D) feature at least partially embedded within the substrate adjacent the gate stack, the feature including:
a first semiconductor material layer;a second semiconductor material layer disposed over the first semiconductor material layer, wherein the second semiconductor material layer is a different semiconductor material than the first semiconductor material layer; anda third semiconductor material layer disposed over the second semiconductor material layer, wherein the third semiconductor material layer includes a tin (Sn) material.