| 发明名称 | Anti-snapback circuitry for metal oxide semiconductor (MOS) transistor | ||
| 摘要 | A circuit for protecting a metal oxide semiconductor (MOS) device is configured to hold down or pull down a voltage at a gate of the protected MOS device during an electrostatic discharge (ESD) event. The circuit includes at least one active device or capacitance-providing element connected to the gate of the protected MOS device, configured to pull down or hold down the voltage at the gate of the protected MOS device when the ESD event occurs. | ||
| 申请公布号 | US9269705(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201213464422 | 申请日期 | 2012.05.04 |
| 申请人 | Polar Semiconductor, LLC | 发明人 | Kimber Kurt;Litfin David |
| 分类号 | H02H3/00;H02H9/04;H02H9/00;H01L27/02 | 主分类号 | H02H3/00 |
| 代理机构 | Kinney & Lange, P.A. | 代理人 | Kinney & Lange, P.A. |
| 主权项 | 1. A circuit for protecting a metal oxide semiconductor (MOS) device by pulling down a voltage at a gate of the protected MOS device during an electrostatic discharge (ESD) event, the circuit comprising: at least one active device connected to the gate of the protected MOS device, configured to actively pull down the voltage at the gate of the protected MOS device when the ESD event occurs, wherein pulling down the voltage at the gate of the protected MOS device effectively turns off the protected MOS device when the ESD event occurs. | ||
| 地址 | Bloomington MN US | ||