发明名称 |
Micro-plasma field effect transistors |
摘要 |
In some aspects, a micro-plasma device comprises a plasma gas enclosure containing at least one plasma gas, and a plurality of electrodes interfaced with the plasma gas enclosure. In other aspects, a micro-plasma circuitry apparatus comprises a first layer having a cavity formed therein and a second layer having a circuit formed therein. The circuit includes a micro-plasma circuit (“MPC”) that includes one or more micro-plasma devices (“MPDs”). The first layer of the circuit is bonded to the second layer of the circuit thereby forming an enclosure that contains at least one plasma gas. An excitation voltage is applied to a drain electrode of the MPDs to generate a conductive plasma path between the drain electrode and a source electrode. |
申请公布号 |
US9269521(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201514608298 |
申请日期 |
2015.01.29 |
申请人 |
UNIVERSITY OF UTAH RESEARCH FOUNDATION |
发明人 |
Tabib-Azar Massood |
分类号 |
H01J17/46;H01J17/06;H01J17/49;H01J17/04;H01J17/16 |
主分类号 |
H01J17/46 |
代理机构 |
Michael Best & Friedrich LLP |
代理人 |
Michael Best & Friedrich LLP |
主权项 |
1. A micro-plasma device, comprising:
a plasma gas enclosure containing at least one plasma gas; a drain electrode interfaced with the plasma gas enclosure; and a source electrode interfaced with the plasma gas enclosure, wherein the drain electrode and the source electrode are separated from each other by a distance, wherein the micro-plasma device is configured, when a voltage signal having a value greater than a breakdown voltage of the plasma gas between the drain electrode and the source electrode is applied to the drain electrode, to generate a conductive plasma path through the at least one plasma gas between the drain electrode and the source electrode. |
地址 |
Salt Lake City UT US |