发明名称 |
Method of creating spiral inductor having high Q value |
摘要 |
A method for fabricating an inductor structure having an increased quality factor (Q) is provided. In one embodiment, a substrate is provided and a plurality of metal layers are formed on the substrate. A spirally patterned conductor layer is formed over and in the substrate and in the metal layers to produce a planar spiral inductor. A via hole is formed over and in the substrate and in the metal layers within the spirally patterned conductor layer, the via hole being formed by a through silicon via (TSV) process. Thereafter, the via hole is filled with a core layer, wherein the core layer extends from a bottom surface of the substrate to a top surface of the metal layers. |
申请公布号 |
US9269485(B2) |
申请公布日期 |
2016.02.23 |
申请号 |
US201113102531 |
申请日期 |
2011.05.06 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
Chang Shih-Cheng;Lee Hui-Yu |
分类号 |
H01L29/66;H01F17/00;H01L23/522;H01L23/64;H01L49/02;H01L23/00 |
主分类号 |
H01L29/66 |
代理机构 |
McClure, Qualey & Rodack, LLP |
代理人 |
McClure, Qualey & Rodack, LLP |
主权项 |
1. An inductor structure, comprising:
a silicon wafer; a dielectric layer formed on the silicon wafer; a spirally patterned conductor layer formed over and in the silicon wafer and in the dielectric layer to form metal-containing layers, the spirally patterned conductor layer forming a planar spiral inductor; a via hole formed over and in the silicon wafer and in the metal-containing layers within the spirally patterned conductor layer, wherein the via hole is formed by a through silicon via (TSV) process and is formed through the silicon wafer; and a core layer filling the via hole, wherein the core layer extends from a bottom surface of the silicon wafer to a top surface of the metal-containing layers, and the core layer is insulated from the spirally patterned conductor layer and surrounded by the spirally patterned conductor layer. |
地址 |
Hsinchu TW |