| 发明名称 |
Two transistor ternary random access memory |
| 摘要 |
A two transistor ternary random access memory (TTTRAM) circuit includes an voltage/current input, an input/output switch, a first transistor, a first pull up resistor, a second transistor, and a second pull up resistor. The first transistor has a first emitter, a first collector connected to the input/output switch, and a first base. The first pull up resistor is connected to the first emitter and the voltage/current input. The second transistor has a second emitter connected to ground, a second collector, and a second base connected to the input/output switch. The second pull up resistor is connected to the first base, the second collector, and the voltage/current input. |
| 申请公布号 |
US9269422(B2) |
申请公布日期 |
2016.02.23 |
| 申请号 |
US201414500055 |
申请日期 |
2014.09.29 |
| 申请人 |
|
发明人 |
Tsaoussis Simon Peter |
| 分类号 |
G11C11/34;G11C11/411;G11C7/12 |
主分类号 |
G11C11/34 |
| 代理机构 |
Mayback & Hoffman, P.A. |
代理人 |
Mayback & Hoffman, P.A. ;Mayback Gregory L. |
| 主权项 |
1. A two transistor ternary random access memory (TTTRAM) circuit, comprising:
an voltage/current input; an input/output switch; a first transistor having:
a first emitter;a first collector connected to the input/output switch; anda first base; a first pull up resistor connected to the first emitter and to the voltage/current input; a second transistor having:
a second emitter connected to ground;a second collector; anda second base connected to the input/output switch; and a second pull up resistor connected to the first base, the second collector, and the voltage/current input. |
| 地址 |
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