Thin film transistor array panel and manufacturing method of the same

摘要

A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.

主权项

1. A method for manufacturing a thin film transistor array panel, comprising:
disposing a thin film transistor including a drain electrode on a substrate; disposing a passivation layer on the thin film transistor and the substrate; depositing a transparent organic material on the passivation layer and patterning the transparent organic material to form a partition including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode; forming a color filter in a region defined by the partition through an Inkjet printing method; depositing an organic capping layer covering the partition and the color filter; removing a portion of the organic capping layer aligned with the drain electrode; removing a contact portion of the partition and a portion of the passivation layer by a dry etch method to form a contact hole which exposes the drain electrode; and electrically connecting a pixel electrode to the drain electrode through the contact hole.