Semiconductor device with embedded silicon-controlled rectifier

摘要

A semiconductor device includes a metal-oxide-semiconductor field effect transistor (MOSFET), in which parasitic silicon controlled rectifier (SCR) equivalent circuits are formed in the MOSFET, and the MOSFET further includes a drain region. The drain region includes P-type heavily doped regions which are different from each other, in which the P-type heavily doped regions are respectively operated as anodes of the SCR equivalent circuits.

主权项

1. A semiconductor device comprising:
a metal oxide semiconductor field effect transistor (MOSFET) comprising a plurality of parasitic silicon controlled rectifier (SCR) equivalent circuits, wherein the MOSFET further comprises: a drain region comprising:
an N-type well region;a plurality of different P-type heavily doped regions disposed in the N-type well region, wherein the P-type heavily doped regions are operated as anodes of the parasitic SCR equivalent circuits in the drain region, respectively; anda plurality of N-type heavily doped regions disposed in the N-type well region, the N-type heavily doped regions and the P-type heavily doped regions being laterally and alternately disposed.