Debond interconnect structures

摘要

The present subject matter relates to the field of fabricating microelectronic devices. In at least one embodiment, the present subject matter relates to forming an interconnect that has a portion thereof which becomes debonded from the microelectronic device during cooling after attachment to an external device. The debonded portion allows the interconnect to flex and absorb stress.

主权项

1. A method of forming an interconnect, comprising:
forming a dielectric layer with an opening therein to expose a conductive trace; forming a conductive adhesion layer on a portion of the dielectric layer and contacting the exposed conductive trace; forming an interconnect extension with a first portion adhered to the adhesion layer and a second portion proximate the dielectric layer; forming a metal oxide release layer between the interconnect extension second portion and the dielectric layer; and introducing stress to the interconnect extension to debond the interconnect extension second portion.