发明名称 Fabrication method of packaging substrate
摘要 A packaging substrate and a semiconductor package using the packaging substrate are provided. The packaging substrate includes: a substrate body having a die attach area, a circuit layer formed around the die attach area and having a plurality of conductive traces each having a wire bonding pad, and a surface treatment layer formed on the wire bonding pads. Therein, only one of the conductive traces is connected to an electroplating line so as to prevent cross-talk that otherwise occurs between conductive traces due to too many electroplating lines in the prior art.
申请公布号 US9269677(B2) 申请公布日期 2016.02.23
申请号 US201414531226 申请日期 2014.11.03
申请人 Siliconware Precision Industries Co., Ltd. 发明人 Chen Chia-Yin;Liu Yu-Ching;Chang Yueh-Chiung;Wang Yu-Po
分类号 H01L23/00 主分类号 H01L23/00
代理机构 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. 代理人 Mintz Levin Cohn Ferris Glovsky and Popeo, P.C. ;Corless Peter F.;Jensen Steven M.
主权项 1. A fabrication method of a packaging substrate, comprising the steps of: providing a substrate body having a die attach area and a circuit layer formed around the die attach area, wherein the circuit layer has a plurality of conductive traces each having a first end positioned adjacent to the die attach area and an apposing second end positioned away from the die attach area, each of the first ends has a wire bonding pad, the second end of at least one of the conductive traces at at least one side of the die attach area is connected to an electroplating line, and the electroplating lines and the wire bonding pads at the same side of the die attach area are different in number; forming a conductive layer at an edge of the die attach area between the die attach area and the circuit layer, and electrically connecting the conductive layer to the conductive traces; performing an electroplating process through the conductive layer and the electroplating line so as to form a surface treatment layer on the wire bonding pads; and removing the conductive layer.
地址 Taichung TW
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