Chemically altered carbosilanes for pore sealing applications

摘要

A method including forming a dielectric material including a surface porosity on a circuit substrate including a plurality of devices; chemically modifying a portion of the surface of the dielectric material with a first reactant; reacting the chemically modified portion of the surface with a molecule that, once reacted, will be thermally stable; and forming a film including the molecule. An apparatus including a circuit substrate including a plurality of devices; a plurality of interconnect lines disposed in a plurality of layers coupled to the plurality of devices; and a plurality of dielectric layers disposed between the plurality of interconnect lines, wherein at least one of the dielectric layers comprises a porous material surface relative to the plurality of devices and the surface comprises a pore obstructing material.

主权项

1. A method comprising:
forming a dielectric material comprising a surface porosity on a circuit substrate comprising a plurality of devices, a surface of the dielectric material comprising a surface in which a plurality of pores emanate therefrom; selectively chemically modifying a portion of the surface of the dielectric material with a hydrogen or oxygen plasma relative to the plurality of pores; reacting the chemically modified portion of the surface with a molecule that, once reacted, will be thermally stable; and forming a film comprising the molecule, wherein with the film, the surface porosity of the dielectric material is reduced, wherein forming the film comprises forming a film on the surface of the dielectric material and not in the pores.