Handle wafer for high resistivity trap-rich SOI

摘要

The present disclosure relates to a silicon-on-insulator (SOI) substrate having a trap-rich layer, with crystal defects, which is disposed within a handle wafer, and an associated method of formation. In some embodiments, the SOI substrate has a handle wafer. A trap-rich layer, having a plurality of crystal defects that act to trap carriers, is disposed within the handle wafer at a position abutting a top surface of the handle wafer. An insulating layer is disposed onto the handle wafer. The insulating layer has a first side abutting the top surface of the handle wafer and an opposing second side abutting a thin layer of active silicon. By forming the trap-rich layer within the handle wafer, fabrication costs associated with depositing a trap-rich material (e.g., polysilicon) onto a handle wafer are reduced and thermal instability issues are prevented.

主权项

1. A substrate, comprising:
a handle wafer; a trap-rich layer disposed within the handle wafer at a position abutting a top surface of the handle wafer, wherein the trap rich layer comprises a re-crystallized material having a plurality of oxidation induced stacking faults configured to trap carriers; an insulating layer having a first side abutting the top surface of the handle wafer at an interface with the trap-rich layer, wherein the top surface of the handle wafer has a scratched top surface with depressions extending in lines across the top surface of the handle wafer and forming protrusions extending into the insulating layer; and a thin layer of active silicon abutting a second side of the insulating layer that opposes the first side.