Light emitting diodes with low refractive index material layers to reduce light guiding effects

摘要

Light emitting diodes including low refractive index layers for reducing guided light are disclosed. The light-emitting diodes include at least one n-doped layer, at least one p-doped layer, and an active region disposed between the at least one n-doped layer and the at least one p-doped layer. The active region comprises a light-emitting material. The light-emitting diode further comprises at least one low refractive index layer disposed in or around the active region.

主权项

1. A light-emitting diode (LED) comprising:
at least one n-doped layer ; at least one p-doped layer; an active region comprising of at least one layer of light-emitting material, disposed between the at least one n-doped layer and the at least one p-doped layer; at least one low refractive index layer disposed within one optical wavelength of the active region, wherein the optical wavelength indicates wavelength of light emitted from the active region, and the at least one low refractive index layer configured to substantially reduce light guiding by the active region; and an InGaN superlattice underlying the active region, wherein the at least one low refractive index material layer is disposed within less than one optical wavelength of the InGaN superlattice, wherein the active region including the at least one low refractive index layer is characterized by an average refractive index from 0% to 5% higher than the refractive index of a host material.