| 发明名称 | Light-emitting device | ||
| 摘要 | A light-emitting device includes: a Distributed Bragg reflector comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth; and a light-emitting semiconductor stack associated with the Distributed Bragg reflector; wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually changed in a direction toward the light-emitting semiconductor stack. | ||
| 申请公布号 | US9269862(B2) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201314093252 | 申请日期 | 2013.11.29 |
| 申请人 | EPISTAR CORPORATION | 发明人 | Lo Wu-Tsung;Yang Yu-Chih;Wu Chien-Ming;Hong Kai-Yi |
| 分类号 | H01L33/10;H01L33/32;H01L33/30;H01L33/46 | 主分类号 | H01L33/10 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A light-emitting device, comprising: a substrate; a light-emitting semiconductor stack on the substrate and having a first side and a second side opposite to the first side; and a Distributed Bragg reflector on the first side of the light-emitting semiconductor stack and comprising alternate first semiconductor layers and second semiconductor layers, wherein each first semiconductor layer comprises a low-refractive-index part having a depth, wherein the depths of the low-refractive-index parts of the first semiconductor layers are gradually decreased in a direction from the substrate toward the light-emitting semiconductor stack, and the light-emitting device is devoid of any Distributed Bragg reflector on the second side of the light-emitting semiconductor stack. | ||
| 地址 | Hsinchu TW | ||