Semiconductor device and manufacturing method thereof, delamination method, and transferring method

摘要

A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.

主权项

1. A semiconductor device comprising:
a flexible substrate; an oxide film; an insulating film comprising nitrogen over the oxide film; a semiconductor film over the insulating film; and a metal oxide layer in contact with a bottom side of the oxide film, wherein the metal oxide layer comprises crystal, and wherein the metal oxide layer is adhered to the flexible substrate with an adhesive material.